■ 控制生长条件实现优异的二维电子气
■ 利用特有的缓冲层生长技术实现高击穿电压和极低漏电流
■ 原位氮化硅沉积提供了优良的动态性能，提高器件可靠性
■ 控制生长条件实现的高均匀性和重复性
高效率
可靠
服务
Key Features:
● High Vertical Breakdown Voltage: >1000V
● Low Leakage Current @Sub. Ground：<0.1uA/mm2@600V
● Bow X/Y: +/-45um
Typical Applications：
● 650V HEMTs
● 650V Diodes
| Parameters | Epi Product 01 | Epi Product 02 |
| Substrate | 6” 1mm <111> p-type Si | 6” 1mm <111> p-type Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Bow | +/-45um | +/-45um |
| Cracking | <5mm | <5mm |
| Vertical BV | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Insitu SiN Cap | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Mobility | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
备注：亦可根据客户需求进行外延结构定制
