PRODUCTS
氮化镓 (GaN) 功率器件
氮化镓 (GaN) 功率器件
润新微电子提供具有更高性价比、稳定可靠的氮化镓产品，致力于推动电能转换革命！
■ 技术成熟度高
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
高效率
可靠
服务
■ 技术成熟度高
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
高效率可靠服务
| 产品型号 | 封装形式 | VDS(V) | Id(A) | Rds(mΩ) | Vth(V) | Qg(nC) | Qrr(nC) |
| RX65T720MS2A |
DFN 5*6
|
650 | 2.7 | 720 |
2 |
15 | 20 |
| RX65T720MS2H |
DFN 5*6
|
650 | 2.7 | 720 |
4 |
21 | 26 |
| RX65T480MS2A |
DFN 5*6
|
650 | 4 | 480 |
2 |
15 | 20 |
| RX65T480MS2H |
DFN 5*6
|
650 | 4 | 480 |
4 |
21 | 26 |
| RX65T300PS2A |
TO-220
|
650 | 12 | 240 |
2 |
21 | 39 |
| RX65T300HS2A |
DFN 8*8
|
650 | 9 | 240 |
2 |
21 | 39 |
| RX65T300MS2A |
DFN 5*6
|
650 | 8 | 240 |
2 |
21 | 39 |
| RX65T300DS2A |
TO-252
|
650 | 9 | 240 |
2 |
21 | 39 |
| RX65T300FS2A |
TO-220F
|
650 | 7.3 | 240 |
2 |
21 | 39 |
| RX65T300PS2H |
TO-220
|
650 | 12 | 240 |
4 |
20 | 26 |
| RX65T300HS2H |
DFN 8*8
|
650 | 9 | 240 |
4 |
20 | 26 |
| RX65T300DS2H |
TO-252
|
650 | 9 | 240 |
4 |
20 | 26 |
| RX65T300FS2H |
TO-220F
|
650 | 7.3 | 240 |
4 |
20 | 26 |
| RX65T180PS3H |
TO-220
|
650 | 18 | 180 |
4 |
20 | 26 |
| RX65T180HS3H |
DFN 8*8
|
650 | 14 | 180 |
4 |
20 | 26 |
| RX65T125PS2A |
TO-220
|
650 | 23 | 120 |
4 |
21 | 26 |
| RX65T125HS2A |
DFN 8*8
|
650 | 18 | 120 |
4 |
21 | 26 |
| RX65T125FS2H |
TO-220F
|
650 | 11.3 | 120 |
4 |
21 | 26 |
| RX65T080PS3H |
TO-220
|
650 | 30 | 80 |
4 |
21 | 26 |
| RX90T540PS2H |
TO-220
|
900 | 5.5 | 540 |
4 |
20 | 26 |
| RX90T270PS2H |
TO-220
|
900 | 11 | 270 |
4 |
20 | 26 |
| RX90T220PS3H |
TO-220
|
900 | 16.5 | 220 |
4 |
20 | 26 |
| RX90T150PS2A |
TO-220
|
900 | 21 | 150 |
4 |
21 | 26 |
| Test Item | Standard | Conditions | Results |
| HTRB | JESD22-A108 | Tj =150 °C, VDS = 520 V, 1000 hrs | Pass |
| HAST | JESD22-A110 | 130 °C, 85% RH, 33.3 psi, Bias = 42 V, 96 hrs | Pass |
| TC | JESD22-A104 | -55/150 °C, 2 Cycles/hr, 500 Cycles | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±20 V, 1000 hrs | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±30 V, 1000 hrs | Pass |
| ESD-HBM | JEDEC JS-001 | G TO D(+/-)
G TO S(+/-)
S TO D(+/-) Step:500 V,800 V,1000 V,1500 V,2000 V,3000 V,4000 V | Pass (500 V) |
| ESD-CDM | JESD22-C101 | ±30%
Voltage Shift at reference point befpre/after zapping CDM 200 V (±), 500 V (±),700 V (±), 1000 V (±), 1500 V (±), 2000 V (±) | Pass (1500 V) |
| HVOS | N/A | Temp = 150 °C, VDS = 1050/1100/1150 V | LifeTime >106 hrs at 650 V |
| HTOL | N/A | 200/400 V DC/DC Boost Conversion, Tj = 150 °C | LifeTime > 5000 hrs |
