PRODUCTS
氮化镓 (GaN) 功率器件
氮化镓 (GaN) 功率器件
润新微电子提供具有更高性价比、稳定可靠的氮化镓产品，致力于推动电能转换革命！
■ 技术成熟度高
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
高效率
可靠
服务
■ 技术成熟度高
■ 栅压安全区间大
■ 类MOS，应用简单
■ 易实现市场化
高效率可靠服务
| 产品型号 | 封装形式 | Vds(V) | Id(A) | Rds(mΩ) | Vth(V) | Qg(nC) | Qrr(nC) |
| RX70T720DS3HB |
TO-252
|
700 | 3.2 | 720 |
4 |
6.5 | 8.5 |
| RX70T480DS3LB |
TO-252
|
700 | 4.9 | 480 |
2.1 |
5.6 | 11 |
| RX70T480DS3HB |
TO-252
|
700 | 4.6 | 480 |
4 |
6.5 | 11 |
| RX70T320MA3LB |
DFN 5x6-8L
|
700 | 7.2 | 320 |
2.1 |
5.6 | 14 |
| RX70T320DS3LB |
TO-252
|
700 | 7.2 | 320 |
2.1 |
5.6 | 14 |
| RX70T240MA3LB |
DFN 5x6-8L
|
700 | 9.8 | 240 |
2.1 |
5.6 | 19 |
| RX70T240HA3LB |
DFN 8x8-8L
|
700 | 9.8 | 240 |
2.1 |
5.6 | 19 |
| RX70T240HA3HB |
DFN 8x8-8L
|
700 | 9.8 | 240 |
4 |
6.5 | 19 |
| RX70T240FS3HB |
TO-220F
|
700 | 7.5 | 240 |
4 |
16 | 20 |
| RX70T240DS3LB |
TO-252
|
700 | 9.8 | 240 |
2.1 |
5.6 | 20 |
| RX70T240DS3HB |
TO-252
|
700 | 9.8 | 240 |
4 |
16 | 20 |
| RX70T240BS3HB |
TO-263
|
700 | 10 | 240 |
4 |
16 | 20 |
| RX70T180PS3HB |
TO-220
|
700 | 13.5 | 180 |
4 |
16 | 26 |
| RX70T180HA3HB |
DFN 8x8-8L
|
700 | 12.5 | 180 |
4 |
16 | 26 |
| RX70T180FS3HB |
TO-220F
|
700 | 9.8 | 180 |
4 |
16 | 26 |
| RX70T180DS3HB |
TO-252
|
700 | 12.8 | 180 |
4 |
16 | 26 |
| RX70T125PS3HB |
TO-220
|
700 | 18.4 | 125 |
4 |
16 | 36 |
| RX70T125HA3HB |
DFN 8x8-8L
|
700 | 19.4 | 125 |
4 |
16 | 36 |
| RX70T125DS3HB |
TO-252
|
700 | 18.4 | 125 |
4 |
16 | 36 |
| RX65T070WT4H |
TO-247-4L
|
650 | 34.2 | 70 |
4 |
16 | 84 |
| RX65T070TL4H |
TOLL
|
650 | 32.6 | 70 |
4 |
16 | 84 |
| RX65T070PS4H |
TO-220
|
650 | 32.6 | 70 |
4 |
16 | 84 |
| RX65T070HS4H |
DFN 8x8
|
650 | 29.2 | 70 |
4 |
16 | 84 |
| RX65T070HA4H |
DFN 8x8-8L
|
650 | 29.2 | 70 |
4 |
16 | 84 |
| RX65T050WT4HB |
TO-247-4L
|
650 | 43 | 50 |
4 |
25 | 138 |
| RX65T050TL4HB |
TOLL
|
650 | 43 | 50 |
4 |
25 | 138 |
| Test Item | Standard | Conditions | Results |
| HTRB | JESD22-A108 | Tj =150 °C, VDS = 520 V, 1000 hrs | Pass |
| HAST | JESD22-A110 | 130 °C, 85% RH, 33.3 psi, Bias = 42 V, 96 hrs | Pass |
| TC | JESD22-A104 | -55/150 °C, 2 Cycles/hr, 500 Cycles | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±20 V, 1000 hrs | Pass |
| HTGB | JESD22-A108 | 150 °C, VGS = ±30 V, 1000 hrs | Pass |
| ESD-HBM | JEDEC JS-001 | G TO D(+/-)
G TO S(+/-)
S TO D(+/-) Step:500 V,800 V,1000 V,1500 V,2000 V,3000 V,4000 V | Pass (500 V) |
| ESD-CDM | JESD22-C101 | ±30%
Voltage Shift at reference point befpre/after zapping CDM 200 V (±), 500 V (±),700 V (±), 1000 V (±), 1500 V (±), 2000 V (±) | Pass (1500 V) |
| HVOS | N/A | Temp = 150 °C, VDS = 1050/1100/1150 V | LifeTime >106 hrs at 650 V |
| HTOL | N/A | 200/400 V DC/DC Boost Conversion, Tj = 150 °C | LifeTime > 5000 hrs |
